Considerations in the design of a low‐voltage power MOSFET technology - Rutter - 2019 - IET Power Electronics - Wiley Online Library
Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage - ScienceDirect
Mitsubishi Electric develops trench-type SiC MOSFET with electric-field-limiting structure
Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics - ScienceDirect
Trench-structure SiC-MOSFETs and Actual Products | What are SiC-MOSFETs? – SiC-MOSFET Features | TechWeb
Trench SiC MOSFET cuts on-resistance in half ...
Module 28 Trench MOSFETs - YouTube
1.2 kV SiC Trench MOSFETs for All-SiC Modules | Fuji Electric Global
Mitsubishi Electric Develops Trench-type SiC-MOSFET with Unique Electric-field-limiting Structure | 2019 | Global News | MITSUBISHI ELECTRIC UNITED STATES
4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P+ shielding region
The Trench Power MOSFET: Part I—History, Technology, and Prospects
ROHM Gen 4: A Technical Review | TechInsights
Split Gate Technology MOSFETs - MCC | Mouser
Preparation of Papers in Two-Column Format for the Proceedings of the 2004 Sarnoff Symposium
ROHM Gen 4: A Technical Review | TechInsights
History of FET technology and the move to NexFET™
The Trench Power MOSFET: Part I—History, Technology, and Prospects
Figure 1 from Enhanced shielded-gate trench MOSFETs for high-frequency, high-efficiency computing power supply applications | Semantic Scholar
Trench Gate Power MOSFET: Recent Advances and Innovations
Two typical SiC MOSFET flavors: (a) planar and (b) trench. Figure... | Download Scientific Diagram
Silicon Carbide - CoolSiC Trench MOSFET Combining SiC Performance with Silicon Ruggedness
SiC Trench MOSFETs' Reliability under Short-Circuit Conditions | Encyclopedia MDPI
Planar type and Trench type | Semiconductor | SHINDENGEN ELECTRIC MFG.CO.,LTD
Unit-cell clamped trench VDMOS. The deep p + shields the trench gate... | Download Scientific Diagram
100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance
